Growth, characterization, and Chern insulator state in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> via the chemical vapor transport method

As the first intrinsic antiferromagnetic topological insulator, MnBi$_2$Te$_4$ has provided a platform to investigate interplay of band topology and magnetism as well emergent phenomena arising from such an interplay. Here we report chemical-vapor-transport (CVT) growth characterization MnBi$_2$Te$_4$, observation field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown flux-grown via magnetic, transport, scanning tunneling microscopy, angle-resolved photoemission spectroscopy measurements, find that is marked with higher Mn occupancy on site, slightly Mn$_{\rm{Bi}}$ antisites, smaller carrier concentration Fermi level closer Dirac point. Furthermore, device made sample shows by far highest mobility 2500 cm$^2$V$\cdot$s devices appearing at 1.8 K 8 T. Our study provides new route obtain high-quality single crystals are promising make superior realize phenomena, layer effect anomalous hall effect, etc.